G2312

G2312

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G2312
Description:
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Package:
Tape & Reel (TR)
Datasheet:
G2312 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G2312
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:18mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:780 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.25W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 2990
Stock:
2990 Can Ship Immediately
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