G2312

G2312

Images are for reference only
See Product Specifications

G2312
Description:
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Package:
Tape & Reel (TR)
Datasheet:
G2312 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G2312
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:18mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:780 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.25W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 2990
Stock:
2990 Can Ship Immediately
  • Share:
For Use With
IRFP150MPBF
IRFP150MPBF
Infineon Technologies
MOSFET N-CH 100V 42A TO247AC
MSC060SMA070B4
MSC060SMA070B4
Microchip Technology
TRANS SJT N-CH 700V 39A TO247-4
PSMN012-60YS,115
PSMN012-60YS,115
Nexperia USA Inc.
MOSFET N-CH 60V 59A LFPAK56
MCTL300N10Y-TP
MCTL300N10Y-TP
Micro Commercial Co
MOSFET N-CH 100V 300A TOLL-8L
BUK7Y153-100EX
BUK7Y153-100EX
Nexperia USA Inc.
MOSFET N-CH 100V 9.4A LFPAK56
NTB22N06
NTB22N06
onsemi
N-CHANNEL POWER MOSFET
NP90N04VUK-E1-AY
NP90N04VUK-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 40V 90A TO252
NP180N04TUG-E1-AY
NP180N04TUG-E1-AY
Renesas Electronics America Inc
180A, 40V, N-CHANNEL MOSFET
RFH75N05E
RFH75N05E
Harris Corporation
N-CHANNEL POWER MOSFET
IXTQ96N15P
IXTQ96N15P
IXYS
MOSFET N-CH 150V 96A TO3P
NP55N03SUG-E1-AY
NP55N03SUG-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 30V 55A TO252
STI360N4F6
STI360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A I2PAK
You May Also Be Interested In
G20N06D52
G20N06D52
Goford Semiconductor
N60V,RD(MAX)<30M@10V,RD(MAX)<40M
G5P40L
G5P40L
Goford Semiconductor
P40V,RD(MAX)<85M@-10V,RD(MAX)<12
9926
9926
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<30
G2014
G2014
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<11M
G40P03K
G40P03K
Goford Semiconductor
P-30V,RD(MAX)<9.5M@-10V,RD(MAX)<
G12P04K
G12P04K
Goford Semiconductor
P40V,RD(MAX)<35M@-10V,RD(MAX)<45
GC11N65T
GC11N65T
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
GT100N12T
GT100N12T
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
G06P01E
G06P01E
Goford Semiconductor
P12V,RD(MAX)<[email protected],RD(MAX)<4
25P06
25P06
Goford Semiconductor
P60V,RD(MAX)<45M@-10V,VTH2V~3V T
G20P10KE
G20P10KE
Goford Semiconductor
P-CH, -100V, 20A, RD(MAX)<116M@-
G70N04T
G70N04T
Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@