Transistors - FETs, MOSFETs - Arrays
5322 Items
PDF Mfr Part # RFQ Series Packaging Product StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
DF11MR12W1M1B11BPSA1
DF11MR12W1M1B11BPSA1
MOSFET MOD 1200V 50A
Infineon Technologies
CoolSiC™+ Tray Last Time Buy2 N-Channel (Dual)Silicon Carbide (SiC)1200V (1.2kV)50A (Tj)22.5mOhm @ 50A, 15V5.55V @ 20mA124nC @ 15V3680pF @ 800V20mW-40°C ~ 150°C (TJ)Chassis MountModuleAG-EASY1BM-2
TPD3215M
TPD3215M
GANFET 2N-CH 600V 70A MODULE
Transphorm
Bulk Obsolete2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)600V70A (Tc)34mOhm @ 30A, 8V-28nC @ 8V2260pF @ 100V470W-40°C ~ 150°C (TJ)Through HoleModuleModule
MSCSM120AM16CT1AG
MSCSM120AM16CT1AG
PM-MOSFET-SIC-SBD~-SP1F
Microchip Technology
Tube Active2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)173A (Tc)16mOhm @ 80A, 20V2.8V @ 2mA464nC @ 20V6040pF @ 1000V745W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP1F
MSCM20XM16F4G
MSCM20XM16F4G
PM-MOSFET-FREDFET-7-SP4
Microchip Technology
Tube Active--200V77A (Tc)------Chassis MountModuleSP4
MSCC60AM23C4AG
MSCC60AM23C4AG
PM-MOSFET-COOLMOS-SBD-SP4
Microchip Technology
Tube Active2 N-ChannelStandard600V81A (Tc)------Chassis MountModuleSP4
F415MR12W2M1B76BOMA1
F415MR12W2M1B76BOMA1
LOW POWER EASY AG-EASY2B-2
Infineon Technologies
EasyPACK™ CoolSiC™ Tray Last Time Buy4 N-Channel (Half Bridge)Silicon Carbide (SiC)1200V (1.2kV)75A (Tj)15mOhm @ 75A, 15V5.55V @ 30mA186nC @ 15V5.52nF @ 800V--40°C ~ 150°C (TJ)Chassis MountModuleAG-EASY1B-2
F411MR12W2M1B76BOMA1
F411MR12W2M1B76BOMA1
LOW POWER EASY AG-EASY2B-2
Infineon Technologies
EasyPACK™ CoolSiC™ Tray Last Time Buy4 N-Channel (Half Bridge)Silicon Carbide (SiC)1200V (1.2kV)100A (Tj)11.3mOhm @ 100A, 15V5.55V @ 40mA248nC @ 15V7.36nF @ 800V--40°C ~ 150°C (TJ)Chassis MountModuleAG-EASY1B-2
APTMC120AM25CT3AG
APTMC120AM25CT3AG
MOSFET 2N-CH 1200V 105A SP3F
Microchip Technology
Bulk Active2 N-Channel (Half Bridge)Silicon Carbide (SiC)1200V (1.2kV)113A (Tc)25mOhm @ 80A, 20V2.2V @ 4mA (Typ)197nC @ 20V3800pF @ 1000V500W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
MSCSM120AM042CT6AG
MSCSM120AM042CT6AG
PM-MOSFET-SIC-SBD~-SP6C
Microchip Technology
Tube Active2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)495A (Tc)5.2mOhm @ 240A, 20V2.8V @ 6mA1392nC @ 20V18.1pF @ 1000V2.031kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP6C
MSCSM70AM025CD3AG
MSCSM70AM025CD3AG
PM-MOSFET-SIC-SBD~-D3
Microchip Technology
Box Active--700V538A (Tc)------Chassis MountModuleD3
EAB450M12XM3
EAB450M12XM3
450A 1200V SIC HALF-BRIDGE MODUL
Wolfspeed, Inc.
Box Active2 N-Channel (Half Bridge)Silicon Carbide (SiC)1200V (1.2kV)450A (Tc)3.7mOhm @ 450A, 15V3.6V @ 132mA1330nC @ 15V38000pF @ 800V50mW-40°C ~ 175°C (TJ)Chassis MountModule-
2N7002KDW-AU_R1_000A1
2N7002KDW-AU_R1_000A1
60V N-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
Tape & Reel (TR) Active2 N-Channel (Dual)Standard60V250mA (Ta)3Ohm @ 500mA, 10V2.5V @ 250µA0.8nC @ 5V35pF @ 25V350mW (Ta)-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
FDS6900AS
FDS6900AS
SMALL SIGNAL FIELD-EFFECT TRANSI
Fairchild Semiconductor
PowerTrench®, SyncFET™ Bulk Active2 N-Channel (Dual)Logic Level Gate30V6.9A, 8.2A27mOhm @ 6.9A, 10V3V @ 250µA15nC @ 10V600pF @ 15V900mW-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
BSC150N03LDGATMA1
BSC150N03LDGATMA1
MOSFET 2N-CH 30V 8A 8TDSON
Infineon Technologies
OptiMOS™ Tape & Reel (TR) Active2 N-Channel (Dual)Logic Level Gate30V8A15mOhm @ 20A, 10V2.2V @ 250µA13.2nC @ 10V1100pF @ 15V26W-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNPG-TDSON-8-4
DF23MR12W1M1B11BOMA1244
DF23MR12W1M1B11BOMA1244
DF23MR12 - INSULATED GATE BIPOLA
Infineon Technologies
Bulk Active-------------
FD1400R12IP4DBOSA1
FD1400R12IP4DBOSA1
FD1400R12 - INSULATED GATE BIPOL
Infineon Technologies
Bulk Active-------------
GE12047BCA3
GE12047BCA3
1200V 475A SiC Dual Module
General Electric
SiC Power Box Active2 IndependentSilicon Carbide (SiC)1200V (1.2kV)475A4.4mOhm @ 475A, 20V4.5V @ 160mA1248nC @ 18V29.3nF @ 600V1250W-55°C ~ 150°C (Tc)Chassis MountModule-
GE12047CCA3
GE12047CCA3
1200V 475A SIC HALF-BRIDGE MODUL
General Electric
SiC Power Box Active2 N-Channel (Half Bridge)Silicon Carbide (SiC)1200V (1.2kV)475A4.4mOhm @ 475A, 20V4.5V @ 160mA1248nC @ 18V29.3nF @ 600V1250W-55°C ~ 150°C (Tc)Chassis MountModule-
GE17042CCA3
GE17042CCA3
1700V 425A SIC HALF-BRIDGE MODUL
General Electric
Bulk Active2 N-Channel (Half Bridge)Silicon Carbide (SiC)1700V (1.7kV)425A (Tc)4.45mOhm @ 425A, 20V4.5V @ 160mA18V29100pF @ 900V1250W175°C (TJ)Chassis MountModule-
GE17042BCA3
GE17042BCA3
1700V 425A SIC DUAL MODULE
General Electric
Bulk Active2 N-Channel (Dual)Silicon Carbide (SiC)1700V (1.7kV)425A (Tc)4.45mOhm @ 425A, 20V4.5V @ 160mA18V29100pF @ 900V1250W175°C (TJ)Chassis MountModule-