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| Part Number: | F411MR12W2M1B76BOMA1 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Arrays |
| Manufacturer: | Infineon Technologies |
| Packaging: | Tray |
| Product Status: | Last Time Buy |
| FET Type: | 4 N-Channel (Half Bridge) |
| FET Feature: | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tj) |
| Rds On (Max) @ Id, Vgs: | 11.3mOhm @ 100A, 15V |
| Vgs(th) (Max) @ Id: | 5.55V @ 40mA |
| Gate Charge (Qg) (Max) @ Vgs: | 248nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds: | 7.36nF @ 800V |
| Power - Max: | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | AG-EASY1B-2 |
