SIR5710DP-T1-RE3

SIR5710DP-T1-RE3

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SIR5710DP-T1-RE3
Description:
N-CHANNEL 150 V (D-S) MOSFET POW
Package:
Tape & Reel (TR)
Datasheet:
SIR5710DP-T1-RE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SIR5710DP-T1-RE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:7.8A (Ta), 26.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:31.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:770 pF @ 75 V
FET Feature:-
Power Dissipation (Max):4.8W (Ta), 56.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
In Stock: 0
Stock:
0 Can Ship Immediately
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