MCG55P02A-TP

MCG55P02A-TP

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MCG55P02A-TP
Description:
P-CHANNEL MOSFET, DFN3333
Package:
Tape & Reel (TR)
Datasheet:
MCG55P02A-TP Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:MCG55P02A-TP
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Micro Commercial Co
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:55A
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:8.3mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:149 nC @ 10 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:6358 pF @ 10 V
FET Feature:-
Power Dissipation (Max):3.2W (Ta), 38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN3333
Package / Case:8-VDFN Exposed Pad
In Stock: 11980
Stock:
11980 Can Ship Immediately
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