SIR182DP-T1-RE3

SIR182DP-T1-RE3

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SIR182DP-T1-RE3
Description:
MOSFET N-CH 60V 60A PPAK SO-8
Package:
Tape & Reel (TR)
Datasheet:
SIR182DP-T1-RE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SIR182DP-T1-RE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3250 pF @ 30 V
FET Feature:-
Power Dissipation (Max):69.4W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
In Stock: 1232
Stock:
1232 Can Ship Immediately
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