TSM130NB06LCR RLG

TSM130NB06LCR RLG

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TSM130NB06LCR RLG
Description:
MOSFET N-CH 60V 10A/51A 8PDFN
Package:
Tape & Reel (TR)
Datasheet:
TSM130NB06LCR RLG Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TSM130NB06LCR RLG
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2175 pF @ 30 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PDFN (5x6)
Package / Case:8-PowerTDFN
In Stock: 0
Stock:
0 Can Ship Immediately
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