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Part Number: | SI6463BDQ-T1-E3 |
Category: | Discrete Semiconductor Products |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Vishay Siliconix |
Packaging: | Cut Tape (CT) |
Product Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 15mOhm @ 7.4A, 4.5V |
Vgs(th) (Max) @ Id: | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 60 nC @ 5 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |