TP65H150G4LSG-TR

TP65H150G4LSG-TR

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TP65H150G4LSG-TR
Mfr.:
Description:
650 V 13 A GAN FET
Package:
Tape & Reel (TR)
Datasheet:
TP65H150G4LSG-TR Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TP65H150G4LSG-TR
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Transphorm
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:598 pF @ 400 V
FET Feature:-
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:2-PQFN (8x8)
Package / Case:2-PowerTSFN
In Stock: 315
Stock:
315 Can Ship Immediately
  • Share:
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