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| Part Number: | TPN4R712MD,L1Q |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20 V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 4.7mOhm @ 18A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 65 nC @ 5 V |
| Vgs (Max): | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4300 pF @ 10 V |
| FET Feature: | - |
| Power Dissipation (Max): | 42W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-TSON Advance (3.1x3.1) |
| Package / Case: | 8-PowerVDFN |
