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| Part Number: | SSM6G18NU,LF |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20 V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 112mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 4.6 nC @ 4.5 V |
| Vgs (Max): | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 270 pF @ 10 V |
| FET Feature: | Schottky Diode (Isolated) |
| Power Dissipation (Max): | 1W (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 6-µDFN (2x2) |
| Package / Case: | 6-WDFN Exposed Pad |
