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| Part Number: | TK2R4E08QM,S1X |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tube |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 80 V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Rds On (Max) @ Id, Vgs: | 2.44mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id: | 3.5V @ 2.2mA |
| Gate Charge (Qg) (Max) @ Vgs: | 178 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 13000 pF @ 40 V |
| FET Feature: | - |
| Power Dissipation (Max): | 300W (Tc) |
| Operating Temperature: | 175°C |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220 |
| Package / Case: | TO-220-3 |
