Images are for reference only
See Product Specifications
| Part Number: | RN2606(TE85L,F) |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 4.7kOhms |
| Resistor - Emitter Base (R2): | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | 200MHz |
| Power - Max: | 300mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-74, SOT-457 |
| Supplier Device Package: | SM6 |
