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See Product Specifications
| Part Number: | MT3S113(TE85L,F) |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - RF |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 5.3V |
| Frequency - Transition: | 12.5GHz |
| Noise Figure (dB Typ @ f): | 1.45dB @ 1GHz |
| Gain: | 11.8dB |
| Power - Max: | 800mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 30mA, 5V |
| Current - Collector (Ic) (Max): | 100mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | S-Mini |
