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Part Number: | TPC6012(TE85L,F,M) |
Category: | Discrete Semiconductor Products |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Toshiba Semiconductor and Storage |
Packaging: | Tape & Reel (TR) |
Product Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 20mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: | 9 nC @ 5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 630 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | VS-6 (2.9x2.8) |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |