TSM110NB04LDCR RLG

TSM110NB04LDCR RLG

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TSM110NB04LDCR RLG
Description:
DUAL N-CHANNEL POWER MOSFET 40V,
Package:
Tape & Reel (TR)
Datasheet:
TSM110NB04LDCR RLG Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TSM110NB04LDCR RLG
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs:11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1269pF @ 20V
Power - Max:2W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-PDFN (5x6)
In Stock: 0
Stock:
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