BAT42 R0

BAT42 R0

Images are for reference only
See Product Specifications

BAT42 R0
Description:
DIODE SCHOTTKY DO-35
Package:
Tape & Box (TB)
Datasheet:
BAT42 R0 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:BAT42 R0
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Taiwan Semiconductor Corporation
Packaging:Tape & Box (TB)
Product Status:Obsolete
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:500 nA @ 25 V
Capacitance @ Vr, F:7pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-65°C ~ 125°C
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
SSA23L-E3/61T
SSA23L-E3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 2A DO214AC
SS210-E3/5BT
SS210-E3/5BT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 1.5A DO214AA
S1FLD-M-18
S1FLD-M-18
Vishay General Semiconductor - Diodes Division
DIODE GP 200V 700MA DO219AB
VSSA310S-M3/5AT
VSSA310S-M3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 1.7A DO214AC
AM01ZV0
AM01ZV0
Sanken
DIODE GEN PURP 200V 1A AXIAL
MUR260G
MUR260G
onsemi
DIODE GEN PURP 600V 2A AXIAL
BYM36C-TAP
BYM36C-TAP
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 3A SOD64
VS-5EWH06FNTRLHM3
VS-5EWH06FNTRLHM3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 5A DPAK
UPR60E3/TR13
UPR60E3/TR13
Microchip Technology
DIODE GEN PURP 600V 2A POWERMITE
SK52C M6G
SK52C M6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 5A DO214AB
ES2LJHR5G
ES2LJHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AA
RBR2MM40ATR
RBR2MM40ATR
Rohm Semiconductor
DIODE SCHOTTKY 40V 2A PMDU
You May Also Be Interested In
1.5SMC43AH
1.5SMC43AH
Taiwan Semiconductor Corporation
TVS DIODE 36.8VWM 59.3VC DO214AB
BZW04-11HR1G
BZW04-11HR1G
Taiwan Semiconductor Corporation
TVS DIODE 11.1VWM 18.2VC DO204AL
SMAJ45CA R3G
SMAJ45CA R3G
Taiwan Semiconductor Corporation
TVS DIODE 45VWM 72.7VC DO214AC
PGSMAJ5.0CAHE2G
PGSMAJ5.0CAHE2G
Taiwan Semiconductor Corporation
TVS DIODE 5VWM 9.2VC DO214AC
GBU801HD2G
GBU801HD2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 50V 8A GBU
KBP302G C2G
KBP302G C2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 100V 3A KBP
MUR160AHR1G
MUR160AHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
RSFML MQG
RSFML MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500MA SUB SMA
SS110LHRQG
SS110LHRQG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A SUB SMA
ES2CHR5G
ES2CHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 2A DO214AA
SF41G B0G
SF41G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 4A DO201AD
TS321CX5 RFG
TS321CX5 RFG
Taiwan Semiconductor Corporation
IC OPAMP GP 1 CIRCUIT SOT25