RJK6014DPP-E0#T2

RJK6014DPP-E0#T2

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RJK6014DPP-E0#T2
Description:
POWER FIELD-EFFECT TRANSISTOR
Package:
Bulk
Datasheet:
RJK6014DPP-E0#T2 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:RJK6014DPP-E0#T2
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Renesas Electronics America Inc
Packaging:Bulk
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:575mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):35W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
In Stock: 5107
Stock:
5107 Can Ship Immediately
  • Share:
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