SI8467DB-T2-E1

SI8467DB-T2-E1

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SI8467DB-T2-E1
Description:
MOSFET P-CH 20V 4MICROFOOT
Package:
Tape & Reel (TR)
Datasheet:
SI8467DB-T2-E1 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SI8467DB-T2-E1
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:73mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:475 pF @ 10 V
FET Feature:-
Power Dissipation (Max):780mW (Ta), 1.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-Microfoot
Package / Case:4-XFBGA, CSPBGA
In Stock: 0
Stock:
0 Can Ship Immediately
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