PJD35N06A_L2_00001

PJD35N06A_L2_00001

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PJD35N06A_L2_00001
Description:
60V N-CHANNEL ENHANCEMENT MODE M
Package:
Tape & Reel (TR)
Datasheet:
PJD35N06A_L2_00001 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:PJD35N06A_L2_00001
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Panjit International Inc.
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4.7A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:21mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1680 pF @ 20 V
FET Feature:-
Power Dissipation (Max):1.1W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 2830
Stock:
2830 Can Ship Immediately
  • Share:
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