SIR104DP-T1-RE3

SIR104DP-T1-RE3

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SIR104DP-T1-RE3
Description:
MOSFET N-CH 100V 18.3A/79A PPAK
Package:
Tape & Reel (TR)
Datasheet:
SIR104DP-T1-RE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SIR104DP-T1-RE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:18.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:6.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4230 pF @ 50 V
FET Feature:-
Power Dissipation (Max):5.4W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
In Stock: 0
Stock:
0 Can Ship Immediately
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