NTE2973

NTE2973

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NTE2973
Description:
MOSFET-N-CHAN ENHANCEMENT TO-3P
Package:
Bag
Datasheet:
NTE2973 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:NTE2973
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:NTE Electronics, Inc
Packaging:Bag
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 25 V
FET Feature:-
Power Dissipation (Max):275W (Tc)
Operating Temperature:-55°C ~ 150°C
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
In Stock: 252
Stock:
252 Can Ship Immediately
  • Share:
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