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See Product Specifications
| Part Number: | 2N7000 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | NTE Electronics, Inc |
| Packaging: | Bag |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | 5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 60 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | - |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-92 |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
