MSCSM120TLM08CAG

MSCSM120TLM08CAG

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MSCSM120TLM08CAG
Description:
PM-MOSFET-SIC-SBD-SP6C
Package:
Bulk
Datasheet:
MSCSM120TLM08CAG Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:MSCSM120TLM08CAG
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Microchip Technology
Packaging:Bulk
Product Status:Active
FET Type:4 N-Channel (Three Level Inverter)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:333A (Tc)
Rds On (Max) @ Id, Vgs:7.8mOhm @ 80A, 20V
Vgs(th) (Max) @ Id:2.8V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:928nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:12000pF @ 1000V
Power - Max:1378W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:SP6C
In Stock: 5
Stock:
5 Can Ship Immediately
  • Share:
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