SI6963BDQ-T1-GE3

SI6963BDQ-T1-GE3

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SI6963BDQ-T1-GE3
Description:
MOSFET 2P-CH 20V 3.4A 8-TSSOP
Package:
Tape & Reel (TR)
Datasheet:
SI6963BDQ-T1-GE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SI6963BDQ-T1-GE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Obsolete
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3.4A
Rds On (Max) @ Id, Vgs:45mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:830mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:8-TSSOP
In Stock: 0
Stock:
0 Can Ship Immediately
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