BSB012N03LX3 G

BSB012N03LX3 G

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BSB012N03LX3 G
Description:
MOSFET N-CH 30V 39A/180A 2WDSON
Package:
Tape & Reel (TR)
Datasheet:
BSB012N03LX3 G Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:BSB012N03LX3 G
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Infineon Technologies
Packaging:Tape & Reel (TR)
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:39A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:169 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:16900 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
In Stock: 0
Stock:
0 Can Ship Immediately
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