DMN3190LDW-13

DMN3190LDW-13

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DMN3190LDW-13
Description:
MOSFET 2N-CH 30V 1A SOT363
Package:
Tape & Reel (TR)
Datasheet:
DMN3190LDW-13 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:DMN3190LDW-13
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Diodes Incorporated
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:1A
Rds On (Max) @ Id, Vgs:190mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id:2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:87pF @ 20V
Power - Max:320mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
In Stock: 0
Stock:
0 Can Ship Immediately
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