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| Part Number: | BSM180D12P2C101 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Arrays |
| Manufacturer: | Rohm Semiconductor |
| Packaging: | Bulk |
| Product Status: | Active |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C: | 204A (Tc) |
| Rds On (Max) @ Id, Vgs: | - |
| Vgs(th) (Max) @ Id: | 4V @ 35.2mA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 23000pF @ 10V |
| Power - Max: | 1130W |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | - |
| Package / Case: | Module |
| Supplier Device Package: | Module |
