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Transistors - FETs, MOSFETs - Single

39097 Items

Mfr Part #	Series	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
TN0702N3-G MOSFET N-CH 20V 530MA TO92-3 Microchip Technology		Bag	Active	N-Channel	MOSFET (Metal Oxide)	20 V	530mA (Tj)	2V, 5V	1.3Ohm @ 500mA, 5V	1V @ 1mA	-	±20V	200 pF @ 20 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
PSMN015-60PS,127 MOSFET N-CH 60V 50A TO220AB Nexperia USA Inc.		Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	10V	14.8mOhm @ 15A, 10V	4V @ 1mA	20.9 nC @ 10 V	±20V	1220 pF @ 30 V	-	86W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFR9214PBF MOSFET P-CH 250V 2.7A DPAK Vishay Siliconix		Tube	Active	P-Channel	MOSFET (Metal Oxide)	250 V	2.7A (Tc)	10V	3Ohm @ 1.7A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	220 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN4R3-30PL,127 MOSFET N-CH 30V 100A TO220AB Nexperia USA Inc.		Tube	Active	N-Channel	MOSFET (Metal Oxide)	30 V	100A (Tc)	4.5V, 10V	4.3mOhm @ 15A, 10V	2.15V @ 1mA	41.5 nC @ 10 V	±20V	2400 pF @ 12 V	-	103W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SI7370DP-T1-GE3 MOSFET N-CH 60V 9.6A PPAK SO-8 Vishay Siliconix	TrenchFET®	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	9.6A (Ta)	10V	11mOhm @ 12A, 10V	4V @ 250µA	57 nC @ 10 V	±20V	-	-	1.9W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IRF1010EPBF MOSFET N-CH 60V 84A TO220AB Infineon Technologies	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	84A (Tc)	10V	12mOhm @ 50A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	3210 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQPF7P20 MOSFET P-CH 200V 5.2A TO220F onsemi	QFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	5.2A (Tc)	10V	690mOhm @ 2.6A, 10V	5V @ 250µA	25 nC @ 10 V	±30V	770 pF @ 25 V	-	45W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
IRFB7446PBF MOSFET N-CH 40V 120A TO220AB Infineon Technologies	HEXFET®, StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	120A (Tc)	6V, 10V	3.3mOhm @ 70A, 10V	3.9V @ 100µA	93 nC @ 10 V	±20V	3183 pF @ 25 V	-	99W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFD9110PBF MOSFET P-CH 100V 700MA 4DIP Vishay Siliconix		Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	700mA (Ta)	10V	1.2Ohm @ 420mA, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)
IRF6618TRPBF MOSFET N-CH 30V 30A DIRECTFET Infineon Technologies	HEXFET®	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	30A (Ta), 170A (Tc)	4.5V, 10V	2.2mOhm @ 30A, 10V	2.35V @ 250µA	65 nC @ 4.5 V	±20V	5640 pF @ 15 V	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET™ MT	DirectFET™ Isometric MT
FQP3P50 MOSFET P-CH 500V 2.7A TO220-3 onsemi	QFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	2.7A (Tc)	10V	4.9Ohm @ 1.35A, 10V	5V @ 250µA	23 nC @ 10 V	±30V	660 pF @ 25 V	-	85W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
PHP23NQ11T,127 MOSFET N-CH 110V 23A TO220AB Nexperia USA Inc.	TrenchMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	110 V	23A (Tc)	10V	70mOhm @ 13A, 10V	4V @ 1mA	22 nC @ 10 V	±20V	830 pF @ 25 V	-	100W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN017-80PS,127 MOSFET N-CH 80V 50A TO220AB Nexperia USA Inc.		Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	50A (Tc)	10V	17mOhm @ 10A, 10V	4V @ 1mA	26 nC @ 10 V	±20V	1573 pF @ 40 V	-	103W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9610PBF MOSFET P-CH 200V 1.8A TO220AB Vishay Siliconix		Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	1.8A (Tc)	10V	3Ohm @ 900mA, 10V	4V @ 250µA	11 nC @ 10 V	±20V	170 pF @ 25 V	-	20W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPD60R180P7ATMA1 MOSFET N-CH 650V 18A TO252-3 Infineon Technologies	CoolMOS™ P7	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	18A (Tc)	10V	180mOhm @ 5.6A, 10V	4V @ 280µA	25 nC @ 10 V	±20V	1081 pF @ 400 V	-	72W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN8R0-40PS,127 MOSFET N-CH 40V 77A TO220AB Nexperia USA Inc.		Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	77A (Tc)	10V	7.6mOhm @ 25A, 10V	4V @ 1mA	21 nC @ 10 V	±20V	1262 pF @ 12 V	-	86W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRL530PBF MOSFET N-CH 100V 15A TO220AB Vishay Siliconix		Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	15A (Tc)	4V, 5V	160mOhm @ 9A, 5V	2V @ 250µA	28 nC @ 5 V	±10V	930 pF @ 25 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFD9210PBF MOSFET P-CH 200V 400MA 4DIP Vishay Siliconix		Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	400mA (Ta)	10V	3Ohm @ 240mA, 10V	4V @ 250µA	8.9 nC @ 10 V	±20V	170 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)
TSM900N06CH X0G MOSFET N-CHANNEL 60V 11A TO251 Taiwan Semiconductor Corporation		Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	11A (Tc)	4.5V, 10V	90mOhm @ 6A, 10V	2.5V @ 250µA	9.3 nC @ 10 V	±20V	500 pF @ 15 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Stub Leads, IPak
IRF1010NPBF MOSFET N-CH 55V 85A TO220AB Infineon Technologies	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	85A (Tc)	10V	11mOhm @ 43A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	3210 pF @ 25 V	-	180W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3