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Diodes - Rectifiers - Single

48585 Items

Mfr Part #	Series	Packaging	Product Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
UPS840E3/TR13 DIODE SCHOTTKY 40V 8A POWERMITE3 Microchip Technology		Tape & Reel (TR)	Active	Schottky	40 V	8A	450 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 40 V	-	Surface Mount	Powermite®3	Powermite 3	-55°C ~ 125°C
VB30100S-E3/8W DIODE SCHOTTKY 100V 30A TO263AB Vishay General Semiconductor - Diodes Division	TMBS®	Tape & Reel (TR)	Active	Schottky	100 V	30A	910 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-40°C ~ 150°C
FFPF30UA60S DIODE GEN PURP 600V 30A TO220-2 onsemi		Tube	Active	Standard	600 V	30A	2.2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	100 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
VS-HFA08TB120-M3 DIODE FRED 1.2KV 8A TO220AC Vishay General Semiconductor - Diodes Division	HEXFRED®	Tube	Active	Standard	1200 V	8A	4.3 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	95 ns	10 µA @ 1200 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
FFPF10F150STU DIODE GEN PURP 1.5KV 10A TO220F onsemi		Tube	Active	Standard	1500 V	10A	1.6 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	170 ns	10 µA @ 1500 V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
QH08TZ600 DIODE GEN PURP 600V 8A TO220AC Power Integrations	Qspeed™	Tube	Active	Standard	600 V	8A	3.15 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	11.1 ns	250 µA @ 600 V	25pF @ 10V, 1MHz	Through Hole	TO-220-2	TO-220AC	150°C (Max)
VS-8TQ100-M3 DIODE SCHOTTKY 100V 8A TO220AC Vishay General Semiconductor - Diodes Division		Tube	Active	Schottky	100 V	8A	880 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	550 µA @ 100 V	500pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
IDD04SG60CXTMA2 DIODE SCHOTTKY 600V 4A TO252-3 Infineon Technologies	CoolSiC™+	Tape & Reel (TR)	Active	Silicon Carbide Schottky	600 V	4A (DC)	2.3 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 600 V	80pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
V30100S-E3/4W DIODE SCHOTTKY 100V 30A TO220AB Vishay General Semiconductor - Diodes Division	TMBS®	Tube	Active	Schottky	100 V	30A	910 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	-	Through Hole	TO-220-3	TO-220-3	-40°C ~ 150°C
1N649-1 DIODE GEN PURP 600V 400MA DO35 Microchip Technology		Bulk	Active	Standard	600 V	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	50 nA @ 600 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
GB02SLT12-214 DIODE SCHOTTKY 1.2KV 2A DO214AA GeneSiC Semiconductor	SiC Schottky MPS™	Tape & Reel (TR)	Active	Silicon Carbide Schottky	1200 V	2A (DC)	1.8 V @ 1 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	131pF @ 1V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA	-55°C ~ 175°C
APT60D60BG DIODE GEN PURP 600V 60A TO247 Microchip Technology		Tube	Active	Standard	600 V	60A	1.8 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	250 µA @ 600 V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
FFH30S60STU DIODE GEN PURP 600V 30A TO247-2 onsemi		Tube	Active	Standard	600 V	30A	2.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	100 µA @ 600 V	-	Through Hole	TO-247-2	TO-247-2	-65°C ~ 150°C
VS-100BGQ100 DIODE SCHOTTKY 100V 100A POWIRTA Vishay General Semiconductor - Diodes Division		Bulk	Active	Schottky	100 V	100A	1.04 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 100 V	-	Chassis Mount	PowerTab™, PowIRtab™	PowIRtab™	-55°C ~ 175°C
RURG8060 DIODE GEN PURP 600V 80A TO247-2 onsemi		Tube	Active	Standard	600 V	80A	1.6 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	250 µA @ 600 V	-	Through Hole	TO-247-2	TO-247-2	-65°C ~ 175°C
RURG80100 DIODE GEN PURP 1000V 80A TO247-2 onsemi		Tube	Active	Standard	1000 V	80A	1.9 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	250 µA @ 1000 V	-	Through Hole	TO-247-2	TO-247-2	-65°C ~ 175°C
JANTX1N5615 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	Military, MIL-PRF-19500/429	Bulk	Active	Standard	200 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 200 V	45pF @ 12V, 1MHz	Through Hole	A, Axial	A-PAK	-65°C ~ 175°C
IDH10G65C6XKSA1 DIODE SCHOTTKY 650V 24A TO220-2 Infineon Technologies		Tube	Active	Silicon Carbide Schottky	650 V	24A (DC)	1.35 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	33 µA @ 420 V	495pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDDD16G65C6XTMA1 DIODE SCHOT 650V 43A HDSOP-10-1 Infineon Technologies	CoolSiC™+	Tape & Reel (TR)	Active	Silicon Carbide Schottky	650 V	43A (DC)	-	No Recovery Time > 500mA (Io)	0 ns	53 µA @ 420 V	783pF @ 1V, 1MHz	Surface Mount	10-PowerSOP Module	PG-HDSOP-10-1	-55°C ~ 175°C
1N5552 DIODE GEN PURP 600V 3A AXIAL Microchip Technology		Bulk	Active	Standard	600 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 600 V	-	Through Hole	B, Axial	-	-65°C ~ 175°C