YJD80G06A-F1-0000

YJD80G06A-F1-0000

Images are for reference only
See Product Specifications

YJD80G06A-F1-0000
Description:
N-CH MOSFET 60V 80A TO-252
Package:
Tape & Reel (TR)
Datasheet:
YJD80G06A-F1-0000 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:YJD80G06A-F1-0000
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Yangzhou Yangjie Electronic Technology Co.,Ltd
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1990 pF @ 30 V
FET Feature:-
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
TK7A90E,S4X
TK7A90E,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 900V 7A TO220SIS
TK16A60W,S4X
TK16A60W,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 15.8A TO220
SPU02N60S5
SPU02N60S5
Infineon Technologies
SPU02N60 - 600V COOLMOS N-CHANNE
EPC2030ENGRT
EPC2030ENGRT
EPC
GANFET NCH 40V 31A DIE
IRFSL23N15D
IRFSL23N15D
Infineon Technologies
MOSFET N-CH 150V 23A TO262
STSJ100NH3LL
STSJ100NH3LL
STMicroelectronics
MOSFET N-CH 30V 100A 8SOIC
IRLR3410CPBF
IRLR3410CPBF
Infineon Technologies
MOSFET N-CH 100V 17A DPAK
IPI147N12N3GAKSA1
IPI147N12N3GAKSA1
Infineon Technologies
MOSFET N-CH 120V 56A TO262-3
NVMFS5C646NLT3G
NVMFS5C646NLT3G
onsemi
MOSFET N-CH 60V 20A/93A 5DFN
BUK9880-55/CUF
BUK9880-55/CUF
Nexperia USA Inc.
MOSFET N-CH 55V 7.5A SOT223
AO4494H
AO4494H
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 18A 8SO
IGT60R070D1ATMA1
IGT60R070D1ATMA1
Infineon Technologies
GANFET N-CH 600V 31A 8HSOF
You May Also Be Interested In
SMAJ36A-F1-0000HF
SMAJ36A-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TVS DIODE 36VWM 58.1VC DO214AC
MBR3060FCT-B1-0000HF
MBR3060FCT-B1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 60V 30A ITO-220AB
HS2J-F1-0000HF
HS2J-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 2A DO214AA
BAS516-F2-0000HF
BAS516-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 100V 250MA SOD523
1N4937G-D1-3000
1N4937G-D1-3000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 1A DO41
GS1J-F1-0000HF
GS1J-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 1A DO214AC
RB520S-30-F2-0000HF
RB520S-30-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 30V 200MA SOD523
F2MF-F1-0000HF
F2MF-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 1000V 2A SMAF
SS32A-F1-0000HF
SS32A-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 20V 3A DO214AC
GR2G-F1-0000HF
GR2G-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 400V 2A DO214AA
GS3M-F1-0000
GS3M-F1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 1000V 3A DO214AB
BZT52C18-F2-0000HF
BZT52C18-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 18V 0.5W SOD-123