WNSC201200CWQ

WNSC201200CWQ

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WNSC201200CWQ
Description:
SILICON CARBIDE POWER DIODE
Package:
Tube
Datasheet:
WNSC201200CWQ Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:WNSC201200CWQ
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:WeEn Semiconductors
Packaging:Tube
Product Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:110 µA @ 1200 V
Capacitance @ Vr, F:510pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
Operating Temperature - Junction:175°C (Max)
In Stock: 0
Stock:
0 Can Ship Immediately
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