WNSC08650T6J

WNSC08650T6J

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WNSC08650T6J
Description:
SILICON CARBIDE POWER DIODE
Package:
Tape & Reel (TR)
Datasheet:
WNSC08650T6J Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:WNSC08650T6J
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:WeEn Semiconductors
Packaging:Tape & Reel (TR)
Product Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:50 µA @ 650 V
Capacitance @ Vr, F:267pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:4-VSFN Exposed Pad
Supplier Device Package:5-DFN (8x8)
Operating Temperature - Junction:175°C (Max)
In Stock: 2876
Stock:
2876 Can Ship Immediately
  • Share:
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