Images are for reference only
See Product Specifications
| Part Number: | TB100EP |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - Bipolar (BJT) - Single |
| Manufacturer: | WeEn Semiconductors |
| Packaging: | Tape & Box (TB) |
| Product Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1 A |
| Voltage - Collector Emitter Breakdown (Max): | 700 V |
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 150mA, 750mA |
| Current - Collector Cutoff (Max): | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 14 @ 100mA, 5V |
| Power - Max: | 2 W |
| Frequency - Transition: | - |
| Operating Temperature: | 150°C |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package: | TO-92-3 |
