NXPSC16650B6J

NXPSC16650B6J

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NXPSC16650B6J
Description:
SILICON CARBIDE POWER DIODE
Package:
Tube
Datasheet:
NXPSC16650B6J Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:NXPSC16650B6J
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:WeEn Semiconductors
Packaging:Tube
Product Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):16A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 16 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:100 µA @ 650 V
Capacitance @ Vr, F:534pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:175°C (Max)
In Stock: 3194
Stock:
3194 Can Ship Immediately
  • Share:
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