NXPSC166506Q

NXPSC166506Q

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NXPSC166506Q
Description:
SILICON CARBIDE POWER DIODE
Package:
Tube
Datasheet:
NXPSC166506Q Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:NXPSC166506Q
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:WeEn Semiconductors
Packaging:Tube
Product Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):16A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 16 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:100 µA @ 650 V
Capacitance @ Vr, F:534pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)
In Stock: 3013
Stock:
3013 Can Ship Immediately
  • Share:
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