NXPSC12650B6J

NXPSC12650B6J

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NXPSC12650B6J
Description:
SILICON CARBIDE POWER DIODE
Package:
Tape & Reel (TR)
Datasheet:
NXPSC12650B6J Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:NXPSC12650B6J
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:WeEn Semiconductors
Packaging:Tape & Reel (TR)
Product Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):12A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 12 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:80 µA @ 650 V
Capacitance @ Vr, F:380pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:175°C (Max)
In Stock: 6298
Stock:
6298 Can Ship Immediately
  • Share:
For Use With
SR36F_R1_00001
SR36F_R1_00001
Panjit International Inc.
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NSVBASH20LT1G
onsemi
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BY550-800-CT
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FFPF08S60SNTU
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IDT06S60CHKSA1
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JAN1N6858-1
Microchip Technology
RECTIFIER
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RB500SM-30FHT2R
Rohm Semiconductor
SCHOTTKY BARRIER DIODES
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