NXPSC126506Q

NXPSC126506Q

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NXPSC126506Q
Description:
SILICON CARBIDE POWER DIODE
Package:
Tube
Datasheet:
NXPSC126506Q Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:NXPSC126506Q
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:WeEn Semiconductors
Packaging:Tube
Product Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):12A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 12 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:80 µA @ 650 V
Capacitance @ Vr, F:380pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)
In Stock: 2984
Stock:
2984 Can Ship Immediately
  • Share:
For Use With
PSDB0860L1_T0_00001
PSDB0860L1_T0_00001
Panjit International Inc.
TO-263, FRED
HER102T/R
HER102T/R
EIC SEMICONDUCTOR INC.
DIODE GEN PURP 100V 1A DO41
FFSH50120A
FFSH50120A
onsemi
1200V 50A SIC SBD
BAS299-7
BAS299-7
Diodes Incorporated
FAST SWITCHING DIODE SOT23
SBA130AS-AU_R1_000A1
SBA130AS-AU_R1_000A1
Panjit International Inc.
SOD-123, SKY
SDT5H100SB-13
SDT5H100SB-13
Diodes Incorporated
SCHOTTKY RECTIFIER SMB
HS3BB
HS3BB
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AA
GPP60DHE3/73
GPP60DHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 6A P600
BYM12-400HE3/97
BYM12-400HE3/97
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO213AB
GP10D-4003-M3/73
GP10D-4003-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
SF47GHR0G
SF47GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 4A DO201AD
HS3F R7G
HS3F R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AB
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