BYR29X-800PQ

BYR29X-800PQ

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BYR29X-800PQ
Description:
DIODE GEN PURP 800V 8A TO220F
Package:
Tube
Datasheet:
BYR29X-800PQ Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:BYR29X-800PQ
Category:Discrete Semiconductor Products
Subcategory:Diodes - Rectifiers - Single
Manufacturer:WeEn Semiconductors
Packaging:Tube
Product Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):55 ns
Current - Reverse Leakage @ Vr:10 µA @ 800 V
Capacitance @ Vr, F:-
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack
Supplier Device Package:TO-220F
Operating Temperature - Junction:175°C (Max)
In Stock: 0
Stock:
0 Can Ship Immediately
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For Use With
1N5396T/R
1N5396T/R
EIC SEMICONDUCTOR INC.
STD 1.5A, CASE TYPE: DO-41
1N34A
1N34A
NTE Electronics, Inc
D-GE- 75PRV .005A
ES1EWF-HF
ES1EWF-HF
Comchip Technology
RECTIFIER SUPER FAST RECOVERY 30
SA2M-M3/61T
SA2M-M3/61T
Vishay General Semiconductor - Diodes Division
DIODE GPP 2A 1000V DO-214AC
S10KCH
S10KCH
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 10A DO214AB
FM140-NS-7A-H
FM140-NS-7A-H
Formosa Microsemi Co., Ltd.
SCHOTTKY BARRIER 40V, 1000MA
UPDS5100H
UPDS5100H
Microsemi Corporation
DIODE SCHOTTKY 100V 5A POWERDI5
SB5H100HE3/54
SB5H100HE3/54
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 5A DO201AD
6A20G A0G
6A20G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 6A R-6
GPA805 C0G
GPA805 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A TO220AC
BAS19-7-G
BAS19-7-G
Diodes Incorporated
DIODE GENERAL PURPOSE SOT23
S1GB-13-G
S1GB-13-G
Diodes Incorporated
DIODE GENERAL PURPOSE SMB
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