SUD19P06-60-GE3

SUD19P06-60-GE3

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SUD19P06-60-GE3
Description:
MOSFET P-CH 60V 18.3A TO252
Package:
Tape & Reel (TR)
Datasheet:
SUD19P06-60-GE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SUD19P06-60-GE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1710 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.3W (Ta), 38.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 0
Stock:
0 Can Ship Immediately
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