Images are for reference only
See Product Specifications
| Part Number: | SQS966ENW-T1_GE3 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Arrays |
| Manufacturer: | Vishay Siliconix |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Rds On (Max) @ Id, Vgs: | 36mOhm @ 1.25A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 8.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 572pF @ 25V |
| Power - Max: | 27.8W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount, Wettable Flank |
| Package / Case: | PowerPAK® 1212-8W Dual |
| Supplier Device Package: | PowerPAK® 1212-8W Dual |
