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| Part Number: | SQS660CENW-T1_GE3 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Vishay Siliconix |
| Packaging: | Tape & Reel (TR) |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60 V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 11.2mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 26 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1950 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 62.5W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK® 1212-8W |
| Package / Case: | PowerPAK® 1212-8W |
