SISS92DN-T1-GE3

SISS92DN-T1-GE3

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SISS92DN-T1-GE3
Description:
MOSFET N-CH 250V 3.4A/12.3A PPAK
Package:
Tape & Reel (TR)
Datasheet:
SISS92DN-T1-GE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SISS92DN-T1-GE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:3.4A (Ta), 12.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:173mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 125 V
FET Feature:-
Power Dissipation (Max):5.1W (Ta), 65.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S
Package / Case:PowerPAK® 1212-8S
In Stock: 0
Stock:
0 Can Ship Immediately
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