SISH106DN-T1-GE3

SISH106DN-T1-GE3

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SISH106DN-T1-GE3
Description:
MOSFET N-CH 20V 12.5A PPAK
Package:
Tape & Reel (TR)
Datasheet:
SISH106DN-T1-GE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SISH106DN-T1-GE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:6.2mOhm @ 19.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8SH
Package / Case:PowerPAK® 1212-8SH
In Stock: 1492
Stock:
1492 Can Ship Immediately
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