SIRA80DP-T1-RE3

SIRA80DP-T1-RE3

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SIRA80DP-T1-RE3
Description:
MOSFET N-CH 30V 100A PPAK SO-8
Package:
Tape & Reel (TR)
Datasheet:
SIRA80DP-T1-RE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SIRA80DP-T1-RE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.62mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:188 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:9530 pF @ 15 V
FET Feature:-
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
In Stock: 11625
Stock:
11625 Can Ship Immediately
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