SIR692DP-T1-RE3

SIR692DP-T1-RE3

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SIR692DP-T1-RE3
Description:
MOSFET N-CH 250V 24.2A PPAK SO-8
Package:
Tape & Reel (TR)
Datasheet:
SIR692DP-T1-RE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SIR692DP-T1-RE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:24.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:63mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 7.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1405 pF @ 125 V
FET Feature:-
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
In Stock: 0
Stock:
0 Can Ship Immediately
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