SIHG039N60EF-GE3

SIHG039N60EF-GE3

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SIHG039N60EF-GE3
Description:
MOSFET N-CH 600V 61A TO247AC
Package:
Tube
Datasheet:
SIHG039N60EF-GE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SIHG039N60EF-GE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tube
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:126 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4323 pF @ 100 V
FET Feature:-
Power Dissipation (Max):357W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
In Stock: 58
Stock:
58 Can Ship Immediately
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