SIHF9630S-GE3

SIHF9630S-GE3

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SIHF9630S-GE3
Description:
MOSFET P-CH 200V 6.5A D2PAK
Package:
Tape & Reel (TR)
Datasheet:
SIHF9630S-GE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SIHF9630S-GE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock: 0
Stock:
0 Can Ship Immediately
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