SIHB28N60EF-T5-GE3

SIHB28N60EF-T5-GE3

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SIHB28N60EF-T5-GE3
Description:
N-CHANNEL 600V
Package:
Tape & Reel (TR)
Datasheet:
SIHB28N60EF-T5-GE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SIHB28N60EF-T5-GE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:123mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2714 pF @ 100 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock: 0
Stock:
0 Can Ship Immediately
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