SIA910EDJ-T1-GE3

SIA910EDJ-T1-GE3

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SIA910EDJ-T1-GE3
Description:
MOSFET 2N-CH 12V 4.5A SC-70-6
Package:
Tape & Reel (TR)
Datasheet:
SIA910EDJ-T1-GE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SIA910EDJ-T1-GE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):12V
Current - Continuous Drain (Id) @ 25°C:4.5A
Rds On (Max) @ Id, Vgs:28mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:455pF @ 6V
Power - Max:7.8W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SC-70-6 Dual
Supplier Device Package:PowerPAK® SC-70-6 Dual
In Stock: 0
Stock:
0 Can Ship Immediately
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